for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information preliminary general description the 0912GN-600 is an internally matched, common source, class ab, gan on sic hemt transistor capable of providing over 18db gain, 600 watts of pulsed rf output power at 128 s pulse width, 10% duty factor across the 960 to 1215 mhz band. market application C 0912GN-600 is a general purpose power transistor that can be used for any of the following applications C - broadband data link - avionics dme, tacan, tcas and mode-s case outline 55-kr common source absolute maximum ratings maximum power dissipation device dissipation @ 25 ? c 1200 w maximum voltage and current drain-source voltage (v dss ) 150 v gate-source voltage (v gs ) -8 to +0 v maximum temperatures storage temperature (t stg ) -55 to +125 ? c operating junction temperature +250 ? c electrical characteristics @ 25 ? c symbol characteristics test conditions min typ max units pout output power pout=600 w, freq=960, 1090, 1215 mhz 600 640 w gp power gain pout=600w, freq=960, 1090, 1215 mhz 18 19 db ? d drain efficiency pout=600 w, freq=960, 1090, 1215 mhz 47 55 % dr droop pout=600w, freq=960, 1090, 1215 mhz 0.5 db vswr-t load mismatch tolerance pout=600w, freq= 1215mhz 3:1 ? jc thermal resistance pulse wi dth=128us, duty=10% 0.2 c/w ? bias condition: vdd=+65v, idq=1000ma peak current (vgs= -2.0 ~ -4.5v typical) ? functional characteristics @ 25 ? c i d(off) drain leakage current v gs = -8v, v d = 65v 10 ma i g(off) gate leakage current v gs = -8v, v d = 0v 8 ma bv dss drain-source breakdown voltage v gs =-8v, i d = 10ma 250 v issue october 2012 export classification: ear-99 0912GN-600 600 watts - 65 volts, 128 ? s, 10% broadband data link 960 - 1215 mhz downloaded from: http:///
for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information typical broad band performace data frequency pin (w) pout (w) id (a) rl (db) nd (%) g (db) droop (db) 960 mhz 8 647 1.9 -9 52 19.1 0.4 1090 mhz 8 665 1.7 -8 60 19.2 0.2 1215 mhz 8 641 1.7 -10 58 19.1 0.2 20% 25% 30% 35% 40% 45% 50% 55% 60% 65% 70% 75% 80% 85% 0.0 50.0 100.0 150.0 200.0 250.0 300.0 350.0 400.0 450.0 500.0 550.0 600.0 650.0 700.0 3.2 4.0 5.0 6.3 7.9 efficiency(%) pout ? (w) pin ? (w) pin ? vs ? pout ??? & ?? pin ? vs ? efficiency ? 0912gn \ 600 ?? 65v ?? 128us@10% 960 1090 1215 960 ? eff 1090 ? eff 1215 ? eff 15 16 17 18 19 20 21 0.0 50.0 100.0 150.0 200.0 250.0 300.0 350.0 400.0 450.0 500.0 550.0 600.0 650.0 700.0 3.2 4.0 5.0 6.3 7.9 gain(db) pout ? (w) pin ? (w) pin ? vs ? pout ?? & ? pin ? vs ? gain ? 0912gn \ 600 ?? 65v ? 128us@10% 960 1090 1215 960 ? gain 1090 ? gain 1215 ? gain 0912GN-600 600 watts - 65 volts, 128 ? s, 10% broadband data link 960 - 1215 mhz downloaded from: http:///
for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information transistor impeda nce information note: in z is looking into the input circuit; load z is looking into t he output circuit. impedance data freq (ghz) zs zl 0.96 0.84 - j1.48 1.63 - j1.22 1.09 0.79 - j0.81 1.68 - j0.93 1.215 0.80 - j0.21 1.70 - j0.69 0912GN-600 600 watts - 65 volts, 128 ? s, 10% broadband data link 960 - 1215mhz downloaded from: http:///
for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information test circuit diagram board material: roger duriod 60 06 @ 25 mil thic kness, er=6.15 item description value item w(mil) l(mil) item w(mil) l(mil) c1 atc ? 800a ? 100pf i1 36 85 d1 580 354 c2 atc ? 100b 100pf i2 36 41 d2 1000 324 c3 atc ? 100b 1000pf i3 84 152 d3 450 120 c4 atc ? 100b 1000pf i4 36 416 d4 260 135 c5 atc ? 100b ? 91pf i5 64 66 d5 176 130 c6 elyctrylic ? capacitor ? (63v) 4700uf i6 464 114 d6 92 250 c7 atc ? 800a ? 68pf i7 90 140 d7 146 238 r1 0805 10 ? ohm i8 900 470 d8 100 438 r2 0805 1.5ohm i9 620 300 d9 36 1460 note ? c3, ? c4 ? x2 i10 36 1360 component ? list input ? layout output ? layout 0912GN-600 600 watts - 65 volts, 128 ? s, 10% broadband data link 960 - 1215 mhz downloaded from: http:///
for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information 55-kr package dimension dimension min (mil) min (mm) max (mil) max (mm) a 370 9.40 372 9.44 b 498 12.65 500 12.7 c 700 17.78 702 17.83 d 830 21.08 832 21.13 e 1030 26.16 1032 26.21 f 101 2.56 102 2.59 g 151 3.84 152 3.86 h 385 9.78 387 9.83 i 130 3.30 132 3.35 j 003 .076 004 0.10 k 135 3.43 137 3.48 l 105 2.67 107 2.72 m 085 2.16 86 2.18 n 065 1.65 66 1.68 0912GN-600 600 watts - 65 volts, 128 ? s, 10% broadband data link 960 - 1215 mhz downloaded from: http:///
for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information the information contained in the document is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitt ed, distributed or disclosed or used without the express duly signed written cons ent of microsemi if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply . this document and the information contained herein may not be modifi ed, by any person other than authorized personnel of microsemi. no license under any patent, copy right, trade secret or other intellectual property right i s granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, es toppels or otherwise. any license under such intellectual property ri ghts must be approved by microsemi in writing signed by an office r of microsemi. microsemi reserves the right to change the configuration, func tionality and performance of its products at anytime without any notice. this product has been subject to limited testing and s hould not be used in conjunction with life-support or other missi on- critical equipment or applications. microsemi assumes no liabilit y whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particu lar purpose, merchantability, or infringement of any patent, copyright or ot her intellectual property right. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp. revision history revision level / date para. affected description 0.1 / 8 october 2012 - initial preliminary release 0912GN-600 600 watts - 65 volts, 128 ? s, 10% broad band data link 960 - 1215 mhz downloaded from: http:///
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